High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS

Heyns, MarcMarcHeynsAdelmann, ChristophChristophAdelmannBrammertz, GuyGuyBrammertzCaymax, MattyMattyCaymaxDe Jaeger, BriceBriceDe JaegerDelabie, AnneliesAnneliesDelabieEneman, GeertGeertEnemanHoussa, MichelMichelHoussaLin, DennisDennisLinMartens, KoenKoenMartensMerckling, ClementClementMercklingMeuris, MarcMarcMeurisMitard, JeromeJeromeMitardPenaud, JulienJulienPenaudPourtois, GeoffreyGeoffreyPourtoisScarrozza, MarcoMarcoScarrozzaSimoen, EddyEddySimoenSioncke, SonjaSonjaSionckeWang, Wei-EWei-EWang2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15472High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOSMeeting abstract