High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS

Heyns, MarcMarcHeynsBellenger, FlorenceFlorenceBellengerBrammertz, GuyGuyBrammertzCaymax, MattyMattyCaymaxDe Jaeger, BriceBriceDe JaegerDelabie, AnneliesAnneliesDelabieEneman, GeertGeertEnemanHoussa, MichelMichelHoussaLin, DennisDennisLinMartens, KoenKoenMartensMerckling, ClementClementMercklingMeuris, MarcMarcMeurisMitard, JeromeJeromeMitardPenaud, JulienJulienPenaudPourtois, GeoffreyGeoffreyPourtoisScarrozza, MarcoMarcoScarrozzaSimoen, EddyEddySimoenSioncke, SonjaSonjaSionckeVan Elshocht, SvenSvenVan ElshochtWang, Wei-EWei-EWang2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15476High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOSProceedings paper