Improved performance of In0.53Ga0.47As-based metal-oxide-semiconductor capacitors with Al:ZrO2 gate dielectric grown by atomic layer deposition

Molle, AlessandroAlessandroMolleLamagna, LucaLucaLamagnaWiemer, ClaudiaClaudiaWiemerSpiga, SabinaSabinaSpigaFanciulli, MarcoMarcoFanciulliMerckling, ClementClementMercklingBrammertz, GuyGuyBrammertzCaymax, MattyMattyCaymax2021-10-192021-10-1920111882-0778https://imec-publications.be/handle/20.500.12860/19449Improved performance of In0.53Ga0.47As-based metal-oxide-semiconductor capacitors with Al:ZrO2 gate dielectric grown by atomic layer depositionJournal article