Xiao, DongpingDongpingXiaoSchreurs, DominiqueDominiqueSchreursDe Raedt, WalterWalterDe RaedtDerluyn, JoffJoffDerluynGermain, MarianneMarianneGermainNauwelaers, BartBartNauwelaersBorghs, GustaafGustaafBorghs2021-10-182021-10-182009-120038-1101https://imec-publications.be/handle/20.500.12860/16567Detailed analysis of parasitic loading effects on power performance of GaN-on-Silicon HEMTsJournal article