Epitaxial Ge Growth in Ultra Narrow STI Patterned Si Wafer

Hikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooSun, JianwuJianwuSunShimura, YosukeYosukeShimuraBender, HugoHugoBenderCaymax, MattyMattyCaymaxThean, AaronAaronThean2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25385Epitaxial Ge Growth in Ultra Narrow STI Patterned Si WaferMeeting abstract