Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs

Nakashima, ToshiyukiToshiyukiNakashimaIdemoto, TatsuyaTatsuyaIdemotoTsunoda, IsaoIsaoTsunodaTakakura, KenichiroKenichiroTakakuraYoneoka, MasashiMasashiYoneokaOhyama, HidenoriHidenoriOhyamaYoshino, KenjiKenjiYoshinoSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-202021-10-2020120255-5476https://imec-publications.be/handle/20.500.12860/21190Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETsJournal article