Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3 gate stacks with TiN electrodes

Kerber, AndreasAndreasKerberCartier, EduardEduardCartierDegraeve, RobinRobinDegraevePantisano, LuigiLuigiPantisanoRoussel, PhilippePhilippeRousselGroeseneken, GuidoGuidoGroeseneken2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6470Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3 gate stacks with TiN electrodesProceedings paper