Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry

De Bisschop, PeterPeterDe BisschopGomez, J.J.GomezGeenen, LucLucGeenenVandervorst, WilfriedWilfriedVandervorst2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1147Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometryJournal article