Optimized design of a Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches

Sato-Iwanaga, JunkoJunkoSato-IwanagaInoue, AkiraAkiraInoueSorada, HaruyukiHaruyukiSoradaTakagi, TakeshiTakeshiTakagiRothschild, AudeAudeRothschildLoo, RogerRogerLooBiesemans, SergeSergeBiesemansIto, ChoshuChoshuItoLiu, YangYangLiuDutton, Robert W.Robert W.DuttonTsuchiya, HideakiHideakiTsuchiya2021-10-222021-10-2220140038-1101https://imec-publications.be/handle/20.500.12860/24482Optimized design of a Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approachesJournal articlehttp://dx.doi.org/10.1016/j.sse.2013.09.010