Radiation-induced deep levels in lead and tin doped n-type czochralski silicon

David, Marie-LaureMarie-LaureDavidSimoen, EddyEddySimoenClaeys, CorCorClaeysNeimash, V.V.NeimashKras'ko, M.M.Kras'koKraitchinskii, A.A.KraitchinskiiVoytovych, V.V.VoytovychTishchenko, V.V.TishchenkoBarbot, J.F.J.F.Barbot2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8748Radiation-induced deep levels in lead and tin doped n-type czochralski siliconProceedings paper