Study of dopant diffusion and defect evolution for advanced ultra shallow junctions based on atomistic kinetic monte carlo approach

Noda, T.T.NodaVandervorst, WilfriedWilfriedVandervorstFelch, S.S.FelchParihar, V.V.PariharVrancken, ChristaChristaVranckenSeveri, SimoneSimoneSeveriHoffmann, Thomas Y.Thomas Y.HoffmannFalepin, A.A.FalepinJanssens, TomTomJanssensBender, HugoHugoBenderVan Daele, B.B.Van DaeleEyben, PierrePierreEybenNiwa, M.M.NiwaSchreutelkamp, R.R.SchreutelkampNouri, F.F.NouriAbsil, PhilippePhilippeAbsilJurczak, GosiaGosiaJurczakDe Meyer, KristinKristinDe MeyerBiesemans, SergeSergeBiesemans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12623Study of dopant diffusion and defect evolution for advanced ultra shallow junctions based on atomistic kinetic monte carlo approachProceedings paper