Discussion on the 1/f noise behavior in Si gate-all-around nanowire MOSFETs at liquid helium temperatures

Boudier, DimitriDimitriBoudierCretu, BogdanBogdanCretuSimoen, EddyEddySimoenVeloso, AnabelaAnabelaVelosoCollaert, NadineNadineCollaert2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30312Discussion on the 1/f noise behavior in Si gate-all-around nanowire MOSFETs at liquid helium temperaturesProceedings paperhttps://ieeexplore.ieee.org/document/8354739/