S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

Sioncke, SonjaSonjaSionckeLin, DennisDennisLinNyns, LauraLauraNynsBrammertz, GuyGuyBrammertzDelabie, AnneliesAnneliesDelabieConard, ThierryThierryConardFranquet, AlexisAlexisFranquetRip, JensJensRipStruyf, HerbertHerbertStruyfDe Gendt, StefanStefanDe GendtMuller, MatthiasMatthiasMullerBeckhoff, BurkhardBurkhardBeckhoffCaymax, MattyMattyCaymax2021-10-192021-10-1920110021-8979https://imec-publications.be/handle/20.500.12860/19802S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursorJournal article