Selective isotropic etching of Group IV semiconductors to enable gate all around device architectures

Kal, SubhadeepSubhadeepKalPereira, CherylCherylPereiraOniki, YusukeYusukeOnikiHolsteyns, FrankFrankHolsteynsSmith, JeffreyJeffreySmithMosden, AelanAelanMosdenKumar, KaushikKaushikKumarBiolsi, PeterPeterBiolsiHurd, Trace Q.Trace Q.Hurd2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30996Selective isotropic etching of Group IV semiconductors to enable gate all around device architecturesMeeting abstract