Zhao, SimengSimengZhaojiang, RongRongjiangWang, PangPangWangZhang, En XiaEn XiaZhangWaldron, NiamhNiamhWaldronKunert, BernadetteBernadetteKunertMitard, JeromeJeromeMitardCollaert, NadineNadineCollaertSoncke, SonjaSonjaSonckeLinten, DimitriDimitriLintenSchrimpf, RonaldRonaldSchrimpfReed, RobertRobertReedFleetwood, DanielDanielFleetwood2021-10-262021-10-262018-09https://imec-publications.be/handle/20.500.12860/32380Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk SiProceedings paper