Sub-10 μA reset in NiO-based resistive switching memory (RRAM) cells

Nardi, FFNardiIelmini, DDIelminiCagli, CCCagliSpiga, SSSpigaFanciulli, MMFanciulliGoux, LudovicLudovicGouxWouters, DirkDirkWouters2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17684Sub-10 μA reset in NiO-based resistive switching memory (RRAM) cellsProceedings paper10.1109/IMW.2010.5488317