Simulation study: the effect of random dopants and random traps on hot-carrier degration in nFinFETs

Makarov, A.A.MakarovKaczer, BenBenKaczerRoussel, PhilippePhilippeRousselVaisman Chasin, AdrianAdrianVaisman ChasinVandemaele, MichielMichielVandemaeleHellings, GeertGeertHellingsEl-Sayed, A.M.A.M.El-SayedJech, M.M.JechGrasser, T.T.GrasserLinten, DimitriDimitriLintenTyaginov, StanislavStanislavTyaginov2021-10-292021-10-292020https://imec-publications.be/handle/20.500.12860/35534Simulation study: the effect of random dopants and random traps on hot-carrier degration in nFinFETsProceedings paper