Effective metal gate work function modification by ion implantation with W-based gate stack

Li, ZilanZilanLiSchram, TomTomSchramKerner, ChristophChristophKernerWitters, ThomasThomasWittersSinganamalla, RaghunathRaghunathSinganamallaPourtois, GeoffreyGeoffreyPourtoisParaschiv, VasileVasileParaschivHoffmann, Thomas Y.Thomas Y.HoffmannRohr, ErikaErikaRohrAbsil, PhilippePhilippeAbsilDe Gendt, StefanStefanDe GendtDe Meyer, KristinKristinDe Meyer2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14032Effective metal gate work function modification by ion implantation with W-based gate stackOral presentation