HfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam deposition

dimoulas, A.A.dimoulasMavrou, G.G.MavrouVellianitis, G.G.VellianitisEvangelou, E.E.EvangelouBoukos, N.N.BoukosHoussa, MichelMichelHoussaCaymax, MattyMattyCaymax2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10390HfO2 high-k gate dielectrics on Ge(100) by atomic oxygen beam depositionJournal article