BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM application

Galeti, M.M.GaletiRodrigues, M.M.RodriguesMartino, J.A.J.A.MartinoCollaert, NadineNadineCollaertSimoen, EddyEddySimoenAoulaiche, MarcMarcAoulaicheJurczak, GosiaGosiaJurczakClaeys, CorCorClaeys2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18940BJT effect analysis in p- and n-SOI MuGFETs with high-k gate dielectrics and TiN metal gate electrode for a 1T-DRAM applicationProceedings paper