Model for the trap-assisted tunnelling current through very thin SiO2/ZrO2 gate dielectric stacks

Houssa, MichelMichelHoussaStesmans, AndreAndreStesmansHeyns, MarcMarcHeyns2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5355Model for the trap-assisted tunnelling current through very thin SiO2/ZrO2 gate dielectric stacksJournal article