Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substrates

Molle, AlessandroAlessandroMolleBrammertz, GuyGuyBrammertzLamagna, LucaLucaLamagnaSpiga, SabinaSabinaSpigaMeuris, MarcMarcMeurisFanciulli, MarcoMarcoFanciulli2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15884Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substratesProceedings paper