Interpretation of PBTI/ TDDB predicted lifetime based on trap characterization by TSCIS in Vth-adjusted transistors

Sahhaf, SaharSaharSahhafDegraeve, RobinRobinDegraeveSrividya, VidyaVidyaSrividyaCho, Moon JuMoon JuChoKauerauf, ThomasThomasKaueraufGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17928Interpretation of PBTI/ TDDB predicted lifetime based on trap characterization by TSCIS in Vth-adjusted transistorsProceedings paper