Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

Porret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyGomez Granados, FernandoFernandoGomez GranadosBaudot, SylvainSylvainBaudotVohra, AnuragAnuragVohraKunert, BernardetteBernardetteKunertDouhard, BastienBastienDouhardBogdanowicz, JanuszJanuszBogdanowiczSchaekers, MarcMarcSchaekersKohen, DavidDavidKohenMargetis, JoeJoeMargetisTolle, JohnJohnTollePetersen Lima, LucasLucasPetersen LimaSammak, AmirAmirSammakScappucci, GiordanoGiordanoScappucciRosseel, ErikErikRosseelLanger, RobertRobertLangerLoo, RogerRogerLoo2021-10-272021-10-2720192162-8769https://imec-publications.be/handle/20.500.12860/33818Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integrationJournal articlehttp://jss.ecsdl.org/content/8/8/P392.full