Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells

Veloso, AnabelaAnabelaVelosoParvais, BertrandBertrandParvaisMatagne, PhilippePhilippeMatagneSimoen, EddyEddySimoenHuynh Bao, TrongTrongHuynh BaoParaschiv, VasileVasileParaschivVecchio, EmmaEmmaVecchioDevriendt, KatiaKatiaDevriendtRosseel, ErikErikRosseelErcken, MoniqueMoniqueErckenChan, BTBTChanDelvaux, ChristieChristieDelvauxAltamirano Sanchez, EfrainEfrainAltamirano SanchezVersluijs, JankoJankoVersluijsTao, ZhengZhengTaoSuhard, SamuelSamuelSuhardBrus, StephanStephanBrusSibaja-Hernandez, ArturoArturoSibaja-HernandezWaldron, NiamhNiamhWaldronLagrain, PieterPieterLagrainRichard, OlivierOlivierRichardBender, HugoHugoBenderVaisman Chasin, AdrianAdrianVaisman ChasinKaczer, BenBenKaczerIvanov, TsvetanTsvetanIvanovRamesh, SivaSivaRameshDe Meyer, KristinKristinDe MeyerRyckaert, JulienJulienRyckaertCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27514Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cellsProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7573409