Drive current improvement in Si tunnel field effect transistors by means of silicide engineering

Leonelli, DanieleDanieleLeonelliVandooren, AnneAnneVandoorenRooyackers, RitaRitaRooyackersVerhulst, AnneAnneVerhulstDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17470Drive current improvement in Si tunnel field effect transistors by means of silicide engineeringProceedings paper