Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line

Meuris, MarcMarcMeurisDe Jaeger, BriceBriceDe JaegerKubicek, StefanStefanKubicekVerheyen, PeterPeterVerheyenVan Steenbergen, JanJanVan SteenbergenLujan, GuilhermeGuilhermeLujanKunnen, EddyEddyKunnenSleeckx, ErikErikSleeckxTeerlinck, IITeerlinckVan Elshocht, SvenSvenVan ElshochtDelabie, AnneliesAnneliesDelabieLindsay, RichardRichardLindsaySatta, AlessandraAlessandraSattaSchram, TomTomSchramChiarella, ThomasThomasChiarellaDegraeve, RobinRobinDegraeveRichard, OlivierOlivierRichardConard, ThierryThierryConardPoortmans, JefJefPoortmansWinderickx, GillisGillisWinderickxHoussa, MichelMichelHoussaBoullart, WernerWernerBoullartSchaekers, MarcMarcSchaekersMertens, PaulPaulMertensCaymax, MattyMattyCaymaxDe Gendt, StefanStefanDe GendtVandervorst, WilfriedWilfriedVandervorstVan Moorhem, ElsElsVan MoorhemBiesemans, SergeSergeBiesemansDe Meyer, KristinKristinDe MeyerRagnarsson, Lars-AkeLars-AkeRagnarssonLee, S.S.LeeKota, G.G.KotaRaskin, G.G.RaskinMijlemans, P.P.MijlemansAfanasiev, ValeriValeriAfanasievStesmans, AndreAndreStesmansHeyns, MarcMarcHeyns2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9300Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping lineProceedings paper