Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

Rai, NarendraNarendraRaiSarkar, RitamRitamSarkarMahajan, AshutoshAshutoshMahajanLaha, ApurbaApurbaLahaSaha, DipankarDipankarSahaGanguly, SwaroopSwaroopGanguly2025-07-312024-11-022025-07-3120240021-8979WOS:001339991700001https://imec-publications.be/handle/20.500.12860/44731Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysisJournal article10.1063/5.0228156WOS:001339991700001GATE-LAGGANHEMTDISLOCATIONSBUFFERTRAPS