Enhancement of the metal si-doped AlGaAs Schottky barrier height by CH4/H2 reactive ion etching

Pereira, RicardoRicardoPereiraVan Hove, MarleenMarleenVan HoveVan Rossum, MarcMarcVan Rossum2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1409Enhancement of the metal si-doped AlGaAs Schottky barrier height by CH4/H2 reactive ion etchingJournal article