Kuo, Ying-ChunYing-ChunKuoYu, HaoHaoYude Almeida Braga, NelsonNelsonde Almeida BragaFang, JingtianJingtianFangGupta, AmratanshAmratanshGuptaYadav, SachinSachinYadavAlian, AliRezaAliRezaAlianPeralagu, UthayasankaranUthayasankaranPeralaguCollaert, NadineNadineCollaertParvais, BertrandBertrandParvais2026-09-142026-09-142025979-8-3315-4884-1https://imec-publications.be/handle/20.500.12860/60338The process of hole generation in GaN HEMTs during the semi-on state continues to be an active field of research. This study analyzes the VDS dependence of hole current in AlGaN/GaN HEMTs using an extended Okuto-Crowell model that accounts for both low-field onset and high-field saturation effects. The model accurately explains the non-conventional bias dependence of the measured hole current. This model enables the simulation of trap-assisted hole generation and may serve as a foundation for future TCAD studies of related phenomena, such as threshold voltage instability and the kink effect.engProceedings paper10.1109/sispad66650.2025.11186384WOS:001846246700084