P+/N junction leakage in thin selectively grown Ge-in-STI substrates

Eneman, GeertGeertEnemanYang, RuiRuiYangWang, GangGangWangDe Jaeger, BriceBriceDe JaegerLoo, RogerRogerLooClaeys, CorCorClaeysCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisHeyns, MarcMarcHeynsSimoen, EddyEddySimoen2021-10-182021-10-1820100040-6090https://imec-publications.be/handle/20.500.12860/17077P+/N junction leakage in thin selectively grown Ge-in-STI substratesJournal article