A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node

Redolfi, AugustoAugustoRedolfiGoux, LudovicLudovicGouxJossart, NicoNicoJossartYamashita, FumikoFumikoYamashitaNishimura, EiichiEiichiNishimuraUrayama, DaisukeDaisukeUrayamaFujimoto, KiwamuKiwamuFujimotoWitters, ThomasThomasWittersLazzarino, FredericFredericLazzarinoJurczak, GosiaGosiaJurczak2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25808A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm nodeProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7223718