ICP and ICPsm process development, a) dry strip only, b) low temperature SiC oxidation removal

Boullart, WernerWernerBoullartMannaert, GeertGeertMannaertBaklanov, MikhaïlMikhaïlBaklanovShamiryam, D.D.ShamiryamVanhaelemeersch, SergeSergeVanhaelemeersch2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3263ICP and ICPsm process development, a) dry strip only, b) low temperature SiC oxidation removalOral presentation