Xiao, DongpingDongpingXiaoSchreurs, Dominique M. M. -P.Dominique M. M. -P.SchreursElKashlan, RanaRanaElKashlanZhang, YangYangZhangCooman, AdamAdamCoomanKhaled, AhmadAhmadKhaledSmellie, DaanishDaanishSmellieAlian, AliRezaAliRezaAlianAsad, MuhammadMuhammadAsadParvais, BertrandBertrandParvaisWambacq, PietPietWambacqPeralagu, UthayasankaranUthayasankaranPeralaguCollaert, NadineNadineCollaert2025-05-052024-08-152025-05-0520250018-9480WOS:001283780200001https://imec-publications.be/handle/20.500.12860/44305Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTsJournal article10.1109/TMTT.2024.3431196WOS:001283780200001ALGAN/GANRELIABILITY