Deep levels in heat-treated and 252Cf-irradiated P-type silicon substrates with different oxygen content

Kaniava, ArvydasArvydasKaniavaVanhellemont, JanJanVanhellemontSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/213Deep levels in heat-treated and 252Cf-irradiated P-type silicon substrates with different oxygen contentJournal article