A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides

Yang, N.N.YangHenson, W. K.W. K.HensonWortman, J. J.J. J.Wortman2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4959A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxidesJournal article