Characterization of PECVD silicon nitride photonic components at 532 and 900 nm wavelength

Neutens, PieterPieterNeutensSubramanian, AnanthAnanthSubramanianMahmud Ul Hasan, Hasan MDHasan MDMahmud Ul HasanChen, ChangChangChenJansen, RoelofRoelofJansenClaes, TomTomClaesRottenberg, XavierXavierRottenbergDu Bois, BertBertDu BoisLeyssens, KennyKennyLeyssensHelin, PhilippePhilippeHelinSeveri, SimoneSimoneSeveriDhakal, AshimAshimDhakalPeyskens, FredericFredericPeyskensLagae, LiesbetLiesbetLagaeDeshpande, ParuParuDeshpandeBaets, RoelRoelBaetsVan Dorpe, PolPolVan Dorpe2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24319Characterization of PECVD silicon nitride photonic components at 532 and 900 nm wavelengthProceedings paperhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1868121&resultClick=1