Extending 0.33NA EUVL to 28 nm pitch using alternative mask and controlled aberrations

Rio, D.D.RioVan Adrichem, P.P.Van AdrichemDelorme, M.M.DelormeLyakhova, K.K.LyakhovaSpence, C.C.SpenceFranke, Joern-HolgerJoern-HolgerFranke2022-03-112022-03-112021978-1-5106-4051-10277-786XWOS:000672825700015https://imec-publications.be/handle/20.500.12860/39412Extending 0.33NA EUVL to 28 nm pitch using alternative mask and controlled aberrationsProceedings paper10.1117/12.2583800978-1-5106-4052-8WOS:000672825700015