Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETs

Xing, GuoGuoXingHatchtel, JordanJordanHatchtelLinten, DimitriDimitriLintenMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersCollaert, NadineNadineCollaertPantelides, SokratesSokratesPantelides2021-10-232021-10-232015-091530-4388https://imec-publications.be/handle/20.500.12860/26203Activation energies for oxide- and interface-trap charge generation due to negative-bias--temperature stress of Si-capped SiGe-pMOSFETsJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7118163