Trade-off analysis between gm/I-D and f(T) of nanosheet NMOS transistors with different metal gate stack at high temperature

Silva, Vanessa C. P. A.Vanessa C. P. A.SilvaMartino, Joao A.Joao A.MartinoSimoen, EddyEddySimoenVeloso, AnabelaAnabelaVelosoAgopian, Paula G. D.Paula G. D.Agopian2022-12-012022-05-102022-12-0120220038-1101WOS:000788835200008https://imec-publications.be/handle/20.500.12860/39783Trade-off analysis between gm/I-D and f(T) of nanosheet NMOS transistors with different metal gate stack at high temperatureJournal article10.1016/j.sse.2022.108267WOS:000788835200008MOSFET