Residue control in the removal of La2O3/HfO2 for high-k/metal gate formation: balancing plasma etch, strip and wet clean

Hellin, DavidDavidHellinVos, IngridIngridVosGeypen, JefJefGeypenBender, HugoHugoBenderParaschiv, VasileVasileParaschivBoullart, WernerWernerBoullartVertommen, JohanJohanVertommen2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17242Residue control in the removal of La2O3/HfO2 for high-k/metal gate formation: balancing plasma etch, strip and wet cleanMeeting abstract