Multi-gate fin field-effect transistors junctions optimization by conventional ion implantation for (Sub-)22 nm technology nodes circuit applications

Veloso, AnabelaAnabelaVelosoDe Keersgieter, AnAnDe KeersgieterBrus, StephanStephanBrusHoriguchi, NaotoNaotoHoriguchiAbsil, PhilippePhilippeAbsilHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-192021-10-1920110021-4922https://imec-publications.be/handle/20.500.12860/20046Multi-gate fin field-effect transistors junctions optimization by conventional ion implantation for (Sub-)22 nm technology nodes circuit applicationsJournal articlehttp://jjap.jsap.jp/link?JJAP/50/04DC16/