Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge

Vincent, BenjaminBenjaminVincentVandervorst, WilfriedWilfriedVandervorstCaymax, MattyMattyCaymaxLoo, RogerRogerLoo2021-10-182021-10-182009-120003-6951https://imec-publications.be/handle/20.500.12860/16499Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on GeJournal article