Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

Wu, ZhichengZhichengWuFranco, JacopoJacopoFrancoTruijen, BrechtBrechtTruijenRoussel, PhilippePhilippeRousselKaczer, BenBenKaczerLinten, DimitriDimitriLintenGroeseneken, GuidoGuidoGroeseneken2022-05-062021-11-022022-05-052022-05-0620210018-9383WOS:000665041900014https://imec-publications.be/handle/20.500.12860/37838Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFETJournal article10.1109/TED.2021.3080657WOS:000665041900014ELECTRON-MOBILITYDEGRADATIONSIMULATIONVOLTAGEMODEL