Another approach to form p+ emitter for rear junction n-type solar cells: above 17.0% efficiency cells with CVD boron-doped epitaxial emitter

Gong, ChunChunGongVan Nieuwenhuysen, KrisKrisVan NieuwenhuysenPosthuma, NielsNielsPosthumaVan Kerschaver, EmmanuelEmmanuelVan KerschaverPoortmans, JefJefPoortmans2021-10-192021-10-1920110927-0248https://imec-publications.be/handle/20.500.12860/18973Another approach to form p+ emitter for rear junction n-type solar cells: above 17.0% efficiency cells with CVD boron-doped epitaxial emitterJournal articlehttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6V51-4YYVCMY-4&_user=799533&_coverDate=01%2F31%2F2011&_rdoc=1&_fmt=hig