Comparison of a bottom-up and a top-down approach for the creation of contact openings in a multi-stack oxide layer at the front interface of Cu(In, Ga)Se-2

Buldu, Dilara GokcenDilara GokcenBuldude Wild, JessicaJessicade WildKohl, ThierryThierryKohlBirant, GizemGizemBirantBrammertz, GuyGuyBrammertzMeuris, MarcMarcMeurisPoortmans, JefJefPoortmansVermang, BartBartVermang2023-03-242022-05-302023-03-2420220038-092XWOS:000793375500001https://imec-publications.be/handle/20.500.12860/39908Comparison of a bottom-up and a top-down approach for the creation of contact openings in a multi-stack oxide layer at the front interface of Cu(In, Ga)Se-2Journal article10.1016/j.solener.2022.04.003WOS:000793375500001REAR SURFACE PASSIVATIONTIME-RESOLVED PHOTOLUMINESCENCECU(IN,GA)SE-2 SOLAR-CELLSTHIN-FILMSEFFICIENCY