Noise and tunnelling through the 2.5nm gate oxide in SOI MOSFETs

Lukyanchikova, N.N.LukyanchikovaSimoen, EddyEddySimoenMercha, AbdelkarimAbdelkarimMerchaClaeys, CorCorClaeys2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9233Noise and tunnelling through the 2.5nm gate oxide in SOI MOSFETsProceedings paper