A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology

Hemelhof, ArnoArnoHemelhofPark, SehoonSehoonParkZhang, YangYangZhangIngels, MarkMarkIngelsGramegna, GiuseppeGiuseppeGramegnaVaesen, KristofKristofVaesenYan, DongyangDongyangYanWambacq, PietPietWambacq2025-07-292025-06-282025-07-292024979-8-3315-4125-52831-4972WOS:001460260800044https://imec-publications.be/handle/20.500.12860/45854A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT TechnologyProceedings paper10.1109/BCICTS59662.2024.10745714979-8-3315-4124-8WOS:001460260800044