Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability

Putcha, VamsiVamsiPutchaFranco, JacopoJacopoFrancoVais, AbhitoshAbhitoshVaisKaczer, BenBenKaczerXie, QiQiXieMaes, Jan WillemJan WillemMaesTang, FuFuTangGivens, MichaelMichaelGivensCollaert, NadineNadineCollaertLinten, DimitriDimitriLintenGroeseneken, GuidoGuidoGroeseneken2021-10-292021-10-2920200026-2714https://imec-publications.be/handle/20.500.12860/35773Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliabilityJournal articlehttps://doi.org/10.1016/j.microrel.2020.113996