High-hole mobility silicon germaium on insulator substrates with high crystalline quality obtained by the germanium condensation technique

Souriau, LaurentLaurentSouriauNguyen, TuanTuanNguyenAugendre, EmmanuelEmmanuelAugendreLoo, RogerRogerLooTerzieva, ValentinaValentinaTerzievaCaymax, MattyMattyCaymaxCristoloveanu, SorinSorinCristoloveanuMeuris, MarcMarcMeurisVandervorst, WilfriedWilfriedVandervorst2021-10-182021-10-1820090013-4651https://imec-publications.be/handle/20.500.12860/16259High-hole mobility silicon germaium on insulator substrates with high crystalline quality obtained by the germanium condensation techniqueJournal article